A Radiation Hardened Mutually Compensated Mobility and Threshold Voltage Reference Approach.
Nugent, Brian.
2012
-
Abstract:
Microelectronics that leave the earth's magnetosphere are exposed to the natural
radiation environment and are subject to effects not experienced by terrestrial
microelectronics. Device characteristic degradation including off state leakage current,
reduced transconductance, and reduced threshold voltage are all potential consequences
of being exposed to the natural radiation ... read moreenvironment. It would benefit the designer to
make these devices radiation hardened. Voltage references are used to provide accurate
and stable voltages over a wide range of temperatures and they are crucial to analog
integrated circuits (ICs). A radiation hardened by design (RHBD) mutually compensated
mobility and threshold voltage reference was designed and tested. Mobility and threshold
voltage decrease with increasing temperature. The technique of mutual compensation of
mobility and threshold voltage cancels these effects for a given temperature and
establishes a zero temperature coefficient (ZTC) for a diode connected MOS. It was found
that linearly combining the output voltages of a diode connected NMOS and PMOS that
implement this technique achieve a thermally stable voltage reference superior to either
the NMOS or PMOS alone.
Thesis (M.S.)--Tufts University, 2012.
Submitted to the Dept. of Electrical Engineering.
Advisor: Sameer Sonkusale.
Committee: Sameer Sonkusale, Valencia Koomson, and Rob Bousquet.
Keyword: Electrical engineering.read less - ID:
- h702qj89m
- Component ID:
- tufts:20954
- To Cite:
- TARC Citation Guide EndNote
