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Integration of electrical and optical structures on a single chip is essential for mass production of low cost optoelectronics due to their smaller footprint, higher throughput efficiencies, and general ease of handling. However, this integration is extremely hard to achieve in case of heterojunctions, where the interfacing materials have different crystal properties. One method of growing reliable ... read moreheterostructures involves the intentional creation of highly periodic, localized dangling bonds at the interface of the two materials to release the strain energy. Use of this method, however, can affect the optical behavior of the epitaxial layer. Since the idea of a heterojunction is to exploit the properties of one material without having to change the substrate layer, retaining or pointing out the changes to the optical properties is key to proper device operation. Specifically in case of GaSb/GaAs heterojunctions, using ellipsometry and x-ray diffraction, it has been discovered that use of this technique increases the absorption coefficient and the index of refraction of the epitaxial layer. Depending on the application, these may or may not be desirable effects. Additionally, analysis methods are generalized for future use with different samples.read less
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