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Abstract: The purpose
of this thesis is to show that GaN can be used to construct superior radio frequency
(RF) transistors for mobile handset power amplifiers (PAs) and similar applications in
the 1-2 watt S-band regime. In order to advance research in this operating regime, it is
essential to have a quick turnaround (device fabrication, model extraction, circuit
design). This thesis will ... read moredescribe a low complexity equivalent circuit large-signal
modeling technique to evaluate and design small, medium power GaN high electron mobility
transistor (HEMT) based PA circuits; demonstrate both the devices and the described
model by the design, fabrication, and testing of both a class AB and class E PA; and
identify the properties of GaN that result in portions of the model which increase
performance (linearity, efficiency, and spectral masking) compared to other device
types.
Thesis (M.S.)--Tufts University,
2012.
Submitted to the Dept. of Electrical
Engineering.
Advisor: SAMEER
SONKUSALE.
Committee: JOHN LACHAPELLE, and MOHAMMED
AFSAR.
Keyword: Electrical
engineering.read less
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