Large-Signal Modeling of GaN HEMT Devices for Power Amplifiers.

Marcoux, Nick.

2012

Description
  • Abstract: The purpose of this thesis is to show that GaN can be used to construct superior radio frequency (RF) transistors for mobile handset power amplifiers (PAs) and similar applications in the 1-2 watt S-band regime. In order to advance research in this operating regime, it is essential to have a quick turnaround (device fabrication, model extraction, circuit design). This thesis will de... read more
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ID:
mp48sr03v
Component ID:
tufts:21118
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