Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor.

Tobin, Roger G.

Kahng, Yung Ho.

2007.

Description
  • We have investigated the effects of sulfur contamination on a Pt-gate silicon carbide based field-effect gas sensor, under ultrahigh vacuum conditions, at a temperature of 527°C527°C. Exposure to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20-600 times greater than the H2SH2S level, rapidly coated the gate with a monolayer of sulfur. Sulfur contamination re... read more
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  • "Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor," Y.H. Kahng, R.G. Tobin, R. Loloee and R.N. Ghosh, J. Appl. Phys. 102, 064505 (2007). http://dx.doi.org/10.1063/1.2779288.
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