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Group IV photonics is a
field of study with increasing interest in CMOS compatible light emitters. Binary
Ge1-xSnx and ternary SiyGe1-y-xSnx alloys have garnered the attention of many researches
for the demonstrated ability of achieving direct-bandgap materials with Sn incorporation
of as little as x=0.06. The material characteristics of Sn require deposition
temperatures well below the optimal ... read moregrowth temperatures of both Si and Ge (500ᵒC)
to prevent surface segregation and ensure proper Sn incorporation into the film. At
these low temperatures (150ᵒC-350ᵒC), material film quality defects may
occur in both Si and Ge. Molecular Beam Epitaxial (MBE) growth of low temperature Si can
provide pertinent information which could lead to improved film quality in GeSn and
SiGeSn alloys. This thesis is an investigation into the MBE growth of Si at a wide range
of temperatures (200ᵒC-600ᵒC). Examination of surface quality, as well as
electrical and optical characteristics show noticeable variations based on deposition
temperatures. The addition of gallium as both a surfactant, and dopant is also shown to
affect both surface and electrical properties of Si and shows potential use for both
doping and shows an effect on film quality in group IV photonic
applications.
Thesis (M.S.)--Tufts University,
2019.
Submitted to the Dept. of Electrical
Engineering.
Advisor: Thomas
Vandervelde.
Committee: Thomas Vandervelde, Kevin
Grossklaus, and Abdellah Dakhama.
Keyword:
Electrical engineering.read less
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