Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H‐terminated Si(100).

Tobin, Roger G.

Krastev, E.T.

Voice, L.D.

1996.

Description
  • We have investigated the crystal structure, surface morphology, and electrical conductance of Cu films grown on H‐terminated Si(100) The films were grown by thermal evaporation at 10−8 Torr, at deposition rates from 0.1 to 3.5 nm/s and at substrate temperatures from room temperature up to 200 °C. Typical film thicknesses were ∼100 nm. Epitaxial growth was verified by x‐ray diffraction for films gr... read more
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  • "Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100)," E.T. Krastev, L.D. Voice and R.G. Tobin, J. Appl. Phys. 79, 6865 (1996). http://dx.doi.org/10.1063/1.361508
ID:
9593v6333
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