Thermal Stress Analysis of High Power LDMOS Semiconductor Package with Innovative "Ductile Layer" Technology.

Zhou, Pu.

2011

Description
  • Abstract: Abstract Managing thermal stress of high power silicon devices is critical in assuring long term reliability. For LDMOS (Lateral Diffused Metal Oxide Semiconductor) power transistors, thermal performance has traditionally been optimized using hard "AuSi" eutectic solder, whereas, the flange is typically made of CuW, whose CTE is matched to silicon. This research investigates the ... read more
This object is in collection Creator department Thesis Type Genre Permanent URL
ID:
6t053t78x
Component ID:
tufts:21072
To Cite:
TARC Citation Guide    EndNote