Copper-on-copper homoepitaxy studied by infrared spectroscopy of adsorbed CO.

Tobin, Roger G.
Hancock, Michael.
Fein, Casey.
2010.

Infrared spectroscopy of adsorbed CO was used to characterize the dependence of surface structure on deposition temperature during homoepitaxial growth on Cu(100) Intensity borrowing due to dipole coupling greatly enhances the absorption signal due to defect-bonded CO, making it possible to detect and quantify defect concentrations at the level of a few percent. For deposition temperatures between... read more

Subjects
Infrared spectroscopy.
Copper.
Tufts University. Department of Physics and Astronomy.
Permanent URL
http://hdl.handle.net/10427/012422
Original publication
"Copper-on-copper homoepitaxy studied by infrared spectroscopy of adsorbed CO," Michael Hancock, Casey Fein and R.G. Tobin, J. Chem. Phys. 133, 164701 (2010). http://dx.doi.org/10.1063/1.3503970
ID: tufts:22336
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