Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor.

Tobin, Roger G.
Kahng, Yung Ho.
2007.

We have investigated the effects of sulfur contamination on a Pt-gate silicon carbide based field-effect gas sensor, under ultrahigh vacuum conditions, at a temperature of 527°C527°C. Exposure to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20-600 times greater than the H2SH2S level, rapidly coated the gate with a monolayer of sulfur. Sulfur contamination re... read more

Subjects
Tufts University. Department of Physics and Astronomy.
Permanent URL
http://hdl.handle.net/10427/012415
Original publication
"Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor," Y.H. Kahng, R.G. Tobin, R. Loloee and R.N. Ghosh, J. Appl. Phys. 102, 064505 (2007). http://dx.doi.org/10.1063/1.2779288.
ID: tufts:22329
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