Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H‐terminated Si(100).

Tobin, Roger G.
Krastev, E.T.
Voice, L.D.
1996.

We have investigated the crystal structure, surface morphology, and electrical conductance of Cu films grown on H‐terminated Si(100) The films were grown by thermal evaporation at 10−8 Torr, at deposition rates from 0.1 to 3.5 nm/s and at substrate temperatures from room temperature up to 200 °C. Typical film thicknesses were ∼100 nm. Epitaxial growth was verified by x‐ray diffraction for films gr... read more

Subjects
Copper--Electric properties.
Tufts University. Department of Physics and Astronomy.
Permanent URL
http://hdl.handle.net/10427/012413
Original publication
"Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100)," E.T. Krastev, L.D. Voice and R.G. Tobin, J. Appl. Phys. 79, 6865 (1996). http://dx.doi.org/10.1063/1.361508
ID: tufts:22327
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