Large-Signal Modeling of GaN HEMT Devices for Power Amplifiers.

Marcoux, Nick.
2017-04-19T12:49:20.099Z

Abstract: The purpose of this thesis is to show that GaN can be used to construct superior radio frequency (RF) transistors for mobile handset power amplifiers (PAs) and similar applications in the 1-2 watt S-band regime. In order to advance research in this operating regime, it is essential to have a quick turnaround (device fabrication, model extraction, circuit design). This thesis will describ... read more

Subjects
Tufts University. Department of Electrical and Computer Engineering.
Permanent URL
http://hdl.handle.net/10427/011643
ID: tufts:21118
To Cite: DCA Citation Guide