Thermal Stress Analysis of High Power LDMOS Semiconductor Package with Innovative "Ductile Layer" Technology.

Zhou, Pu.

Abstract: Abstract Managing thermal stress of high power silicon devices is critical in assuring long term reliability. For LDMOS (Lateral Diffused Metal Oxide Semiconductor) power transistors, thermal performance has traditionally been optimized using hard "AuSi" eutectic solder, whereas, the flange is typically made of CuW, whose CTE is matched to silicon. This research investigates the stress g... read more

Tufts University. Department of Mechanical Engineering.
Permanent URL
ID: tufts:21072
To Cite: DCA Citation Guide