Thermal Stress Analysis of High Power LDMOS Semiconductor Package with Innovative "Ductile Layer" Technology.

Zhou, Pu.
2017-04-18T14:06:01.461Z

Abstract: Abstract Managing thermal stress of high power silicon devices is critical in assuring long term reliability. For LDMOS (Lateral Diffused Metal Oxide Semiconductor) power transistors, thermal performance has traditionally been optimized using hard "AuSi" eutectic solder, whereas, the flange is typically made of CuW, whose CTE is matched to silicon. This research investigates the stress g... read more

Subjects
Tufts University. Department of Mechanical Engineering.
Permanent URL
http://hdl.handle.net/10427/011597
ID: tufts:21072
To Cite: DCA Citation Guide