Through-Silicon Via Analysis for the Design of 3-D Integrated Circuits.

Khan, Nauman.

Abstract: Stacking multiple dies to form 3-D integrated circuits (ICs) has emerged as a promising technology to reduce interconnect delay and power, to increase device density, and to achieve heterogeneous integration. Through-silicon vias (TSVs), metallic wires that connect different dies, are a key enabling technology for 3-D ICs. TSVs can be used for routing signals, for power delivery, and for... read more

Tufts University. Department of Computer Science.
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ID: tufts:20873
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