Through-Silicon Via Analysis for the Design of 3-D Integrated Circuits.

Khan, Nauman.
2017-04-18T13:57:53.475Z

Abstract: Stacking multiple dies to form 3-D integrated circuits (ICs) has emerged as a promising technology to reduce interconnect delay and power, to increase device density, and to achieve heterogeneous integration. Through-silicon vias (TSVs), metallic wires that connect different dies, are a key enabling technology for 3-D ICs. TSVs can be used for routing signals, for power delivery, and for... read more

Subjects
Tufts University. Department of Computer Science.
Permanent URL
http://hdl.handle.net/10427/011398
ID: tufts:20873
To Cite: DCA Citation Guide