0.5 μW sub-threshold operational transconductance amplifiers using 0.15 μm fully depleted silicon-on-insulator (FDSOI) process.

Sonkusale, Sameer.
Olejarz, Piotr.
Park, Kyoungchul.
MacNaughton, Samuel.
Dokmeci, Mehmet R.
2012

We present a low voltage, low power operational transconductance amplifier (OTA) designed using a Fully Depleted Silicon-on-Insulator (FDSOI) process. For very low voltage application down to 0.5 V, two-stage miller-compensated OTAs with both p-channel MOSFET (PMOS) and n-channel MOSFET (NMOS) differential input have been investigated in a FDSOI complementary metal oxide semiconductor (CMOS) 150 n... read more

Subjects
Electrical engineering.
Signal processing.
Amplifiers (Electronics)
Tufts University. Department of Electrical and Computer Engineering.
Permanent URL
http://hdl.handle.net/10427/009766
Original publication
Olejarz, P.; Park, K.; MacNaughton, S.; Dokmeci, M.R.; Sonkusale, S. 0.5 µW Sub-Threshold Operational Transconductance Amplifiers Using 0.15 µm Fully Depleted Silicon-on-Insulator (FDSOI) Process. J. Low Power Electron. Appl. 2012, 2, 155-167. doi:10.3390/jlpea2020155.
ID: tufts:18330
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